1/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.05 - rev.b 1.8v drive nch mosfet rue003n02 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) low voltage drive (1.8v) makes this device ideal for portable equipment. 4) drive circuits can be simple. 5) parallel use is easy. ? applications switching ? packaging specifications ? equivalent circuit tl 3000 rue003n02 type package code basic ordering unit (pieces) taping ? absolute maximum ratings (ta=25 ? c) parameter drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature v dss v gss p d ? 2 tch 20 v v ma mw c 8 300 i d i dp ? 1 continuous pulsed ma 600 150 150 tstg c ? 55 to + 150 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 each terminal mounted on a recommended land ? thermal resistance parameter c / w rth(ch-a) symbol limits unit channel to ambient ? each terminal mounted on a recommended land 833 ? (1)source (2)gate (3)drain emt3 abbreviated symbol : qt drain source gate ? 1 ? 1 esd protection diode ? 2 body diode ? 2
2/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.05 - rev.b data sheet rue003n02 ? electrical characteristics (ta=25 ? c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss |y fs | c oss c rss min. ? 20 ? 0.3 ? ? 400 ? ? ? ? ? ? 0.7 25 ? 10 10 10 ? 1.0 1.0 1.0 ? 0.8 1.2 ? ? ? ? av gs = 8v, v ds = 0v i d = 1ma, v gs = 0v v ds = 20v, v gs = 0v v ds = 10v, i d = 1ma i d = 300ma, v gs = 4.0v i d = 300ma, v gs = 2.5v v ds = 10v i d = 300ma, v ds = 10v v gs = 0v f = 1mhz v a v ? 1.0 1.4 i d = 300ma, v gs = 1.8v pf ms pf pf t d(on) ? 5 ? i d = 150ma, v dd 10v ns t r ? 10 ? v gs = 4.0v ns t d(off) ? 15 ? r l = 67 ns t f ? 10 ? r g = 10 ns typ. max. unit conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-state resistance ? ? pulsed ? ? ? ? ? ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.2 v i s = 100ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed ? electrical characteristic curves 0.0 0.5 1.0 1.5 0.00001 0.0001 0.001 0.01 0.1 1 drain current : i d (a) gate-source voltage : v gs (v) fig.1 typical transfer characteristics ta = 125 c 75 c 25 c ? 25 c v ds = 10v pulsed static drain-source on-state resistance : r ds(on) ( ) drain current : i d (a) 0.1 1 10 0.01 0.1 1 fig.2 static drain-source on-state resistance vs. drain current ( ) ta = 125 c 75 c 25 c ? 25 c v gs = 4v pulsed static drain-source on-state resistance : r ds(on) ( ) drain current : i d (a) 0.1 1 10 0.01 0.1 1 fig.3 static drain-source on-state resistance vs. drain current ( ? ) ta = 125 c 75 c 25 c ? 25 c v gs = 2.5v pulsed static drain-source on-state resistance : r ds(on) ( ) drain current : i d (a) 0.1 1 10 0.01 0.1 1 fig.4 static drain-source on-state resistance vs. drain current ( ?? ) ta = 125 c 75 c 25 c ? 25 c v gs = 1.8v pulsed source current : i s (a) source-drain voltage : v sd (v) 1.5 1 0.5 0.0 0.01 0.1 1 ta = 125 c 75 c 25 c ? 25 c fig.5 source current vs. source-drain voltage v gs = 0v pulsed 0.01 0.1 1 10 100 1 100 capacitance : c (pf) drain-source voltage : v ds (v) 10 c iss c oss c rss ta = 25 c f = 1mh z v gs = 0v fig.6 typical capacitance vs. drain-source voltage
3/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.05 - rev.b data sheet rue003n02 0.01 0.1 10 swithing time : t (ns) drain current : i d (a) 100 1000 1 1 fig.7 switching characteristics t d(off) t r t d(on) t f ta = 25 c v dd = 10v v gs = 4v r g = 10 pulsed ? switching characteristics measurement circuit fig.8 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.9 switching time waveforms
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